GTVA123501FA Datasheet(PDF) - Cree, Inc

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GTVA123501FA Datasheet (PDF) - Cree, Inc

GTVA123501FA Datasheet PDF - Cree, Inc


Part #	GTVA123501FA

Download	GTVA123501FA Download

File Size	285.24 Kbytes

Page	4 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 ??1400 MHz

GTVA123501FA Datasheet (PDF)

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GTVA123501FA Datasheet PDF - Cree, Inc


Part #	GTVA123501FA

Download	GTVA123501FA Click to download

File Size	285.24 Kbytes

Page	4 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 ??1400 MHz

GTVA123501FA Datasheet (HTML) - Cree, Inc

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Similar Part No. - GTVA123501FA

Manufacturer	Part #	Datasheet	Description
Cree, Inc	GTVA126001EC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
WOLFSPEED, INC.	GTVA126001EC-V1-R0	443Kb / 8P	Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Rev. P06, 2020-03-10
	GTVA126001EC-V1-R2	443Kb / 8P	Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Rev. P06, 2020-03-10
	GTVA126001EC_FC	443Kb / 8P	Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Rev. P06, 2020-03-10
Cree, Inc	GTVA126001EFC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz

Similar Description - GTVA123501FA

Manufacturer	Part #	Datasheet	Description
Cree, Inc	GTVA126001EC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
Cree, Inc	GTVA126001EFC	615Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz
WOLFSPEED, INC.	GTVA101K42EV	2Mb / 14P	Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, DC – 1400 MHz Rev. 4.5, March 2021
Cree, Inc	GTVA101K42EV	1Mb / 4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 ??1215 MHz
Cree, Inc	PTVA123501EC	753Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz
Infineon Technologies A...	PTVA123501EFC	1Mb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz Rev. 05.1, 2016-04-26
Cree, Inc	GTVA104001FA	314Kb / 4P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 ??1215 MHz
Cree, Inc	GTVA220701FA	581Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
WOLFSPEED, INC.	GTVA220701FA	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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