2SA1943 Datasheet, PDF - Alldatasheet

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2SA1943 Datasheet, PDF

Search Partnumber : Match&Start with "2SA1943" - Total : 57 ( 1/3 Page)

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	2SA1943	148Kb/2P	TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
Quanzhou Jinmei Electro...	2SA1943	203Kb/4P	Silicon PNP Power Transistors
Unisonic Technologies	2SA1943	112Kb/3P	POWER AMPLIFIER APPLICATIONS
JILIN SINO-MICROELECTRO...	2SA1943	501Kb/8P	Power Amplifier Applications
Fairchild Semiconductor	2SA1943	215Kb/6P	PNP Epitaxial Silicon Transistor
Foshan Blue Rocket Elec...	2SA1943	1Mb/6P	Silicon PNP transistor in a TO-3P Plastic Package.
Toshiba Semiconductor	2SA1943	142Kb/5P	Power Amplifier Applications
Jiangsu Changjiang Elec...	2SA1943	420Kb/2P	TO-3P Plastic-Encapsulate Transistors
Savantic, Inc.	2SA1943	221Kb/4P	Silicon PNP Power Transistors
Thinki Semiconductor Co...	2SA1943	227Kb/2P	150 Watt Silicon Epitaxial Planar PNP Power Transistor
Quanzhou Jinmei Electro...	2SA1943	203Kb/4P	Silicon PNP Power Transistors
ON Semiconductor	2SA1943	247Kb/7P	PNP Epitaxial Silicon Transistor January 2009 Rev. C
Toshiba Semiconductor	2SA1943	139Kb/5P	Power Amplifier Applications
Toshiba Semiconductor	2SA1943	1Mb/73P	Bipolar Small-Signal Transistors
Unisonic Technologies	2SA1943	188Kb/4P	POWER AMPLIFIER APPLICATIONS
Inchange Semiconductor ...	2SA1943	290Kb/2P	isc Silicon PNP Power Transistor 2023-9-20
New Jersey Semi-Conduct...	2SA1943	302Kb/2P	TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
Thinki Semiconductor Co...	2SA1943	287Kb/2P	150 Watt Silicon PNP Power Transistors
New Jersey Semi-Conduct...	2SA1943	81Kb/2P	Silicon PNP Power Transistor
JILIN SINO-MICROELECTRO...	2SA1943-O-AB-N-B	501Kb/8P	Power Amplifier Applications

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2SA1943 Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of 2SA1943

The 2SA1943 is a high-power PNP bipolar junction transistor (BJT) commonly used in audio amplifier applications. Together with its complementary NPN counterpart, the 2SC5200, they are often employed in the output stages of high-power audio amplifiers to drive loudspeakers. Here are some key features and specifications of the 2SA1943:

Type: The 2SA1943 is a PNP transistor, meaning it is constructed with a P-type semiconductor sandwiched between two N-type semiconductors.

Power Amplification: The 2SA1943 is designed for high-power audio amplification applications, and it is commonly used in the output stages of audio amplifiers where high power and efficiency are required.

Collector Current (Ic): The 2SA1943 is capable of handling high collector currents, typically in the range of several amperes.

Collector-Emitter Voltage (Vce): The maximum voltage that can be applied between the collector and emitter terminals without causing breakdown.

Power Dissipation (Pd): This specification indicates the maximum power that the transistor can handle without exceeding its maximum junction temperature.

Transition Frequency (fT): The transition frequency is a parameter that indicates the maximum frequency at which the transistor can operate effectively.

Package: The 2SA1943 is commonly available in a TO-3P package, which is a standard plastic package with three leads.

Applications: The 2SA1943 is used in the output stages of audio amplifiers, including high-power audio amplifiers for stereo systems, PA (public address) systems, and other audio applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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