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BU406 Datasheet, PDF

Search Partnumber : Match&Start with "BU406" - Total : 131 ( 1/7 Page)

Manufacturer	Part #	Datasheet	Description
Mospec Semiconductor	BU406	106Kb/3P	POWER TRANSISTORS(7A,150-200V,60W)
Savantic, Inc.	BU406	109Kb/4P	Silicon NPN Power Transistors
Jiangsu Changjiang Elec...	BU406	633Kb/3P	TO-220-3L Plastic-Encapsulate Transistors
Motorola, Inc	BU406	100Kb/4P	7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
Dc Components	BU406	194Kb/1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
JILIN SINO-MICROELECTRO...	BU406	287Kb/5P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Power Innovations Ltd	BU406	157Kb/7P	NPN SILICON POWER TRANSISTORS
ON Semiconductor	BU406	127Kb/3P	NPN Power Transistors May, 2009 ??Rev. 8
Shenzhen hui lida elect...	BU406	935Kb/4P	High frequency switching power supply
STMicroelectronics	BU406	67Kb/4P	SILICON NPN SWITCHING TRANSISTOR
Tiger Electronic Co.,Lt...	BU406	66Kb/1P	NPN Epitaxial Silicon Transistor
New Jersey Semi-Conduct...	BU406	134Kb/2P	Silicon NPN Power Transistor
Wing Shing Computer Com...	BU406	24Kb/1P	NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE)
Central Semiconductor C...	BU406	54Kb/1P	NPN SLICON POWER TRANSISTOR JEDEC TO-220 CASE
First Silicon Co., Ltd	BU406	351Kb/3P	TRANSISTOR (NPN) High Voltage
Fairchild Semiconductor	BU406	47Kb/5P	High Voltage Switching
Fairchild Semiconductor	BU406	628Kb/1P	FAIRCHILD Small Signal Transistors
List of Unclassifed Man...	BU406	2Mb/31P	SEMICONDUCTORS
Boca Semiconductor Corp...	BU406	112Kb/3P	NPN POWER TRANSISTOR
Continental Device Indi...	BU406	366Kb/4P	NPN PLASTIC POWER TRANSISTORS

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BU406 Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of BU406

The BU406 is a specific type of NPN bipolar junction transistor (BJT). Here are some key details about the BU406 transistor:

Transistor Type: The BU406 is an NPN (Negative-Positive-Negative) transistor.

Maximum Ratings:

Collector-Base Voltage: Typically around 700 V.
Collector-Emitter Voltage: Typically around 400 V.
Emitter-Base Voltage: Typically around 9 V.
Collector Current (Continuous): Typically around 7 A.
Total Power Dissipation: Typically around 65 W.
Gain (hFE): The current gain, also known as the DC current gain or beta (hFE), of the BU406 transistor is typically in the range of 20 to 160. This indicates the amplification capability of the transistor.

Package Type: The BU406 transistor is commonly available in a through-hole package, such as the TO-220 package, which provides easy mounting on a heatsink.

Applications: The BU406 transistor can be used in various electronic circuits and applications, including power amplifiers, voltage regulators, switch mode power supplies, and other applications that require high voltage and current handling capabilities.

Equivalent for BU406

The BU406 is a bipolar NPN power transistor with a maximum collector current of 7A and a maximum collector-emitter voltage of 200V. It is commonly used in high-power switching applications.

Here are some alternative bipolar power transistors that can be used as a replacement for the BU406:

TIP31C: This is a bipolar NPN power transistor with a maximum collector current of 3A and a maximum collector-emitter voltage of 100V. It has a lower current and voltage rating than the BU406, but is commonly used in power supplies and audio amplifiers.

MJ11016: This is a bipolar NPN power transistor with a maximum collector current of 30A and a maximum collector-emitter voltage of 120V. It has a higher current rating than the BU406, but a lower voltage rating. It is commonly used in power supplies, motor control, and audio amplifiers.

2SD882: This is a bipolar NPN power transistor with a maximum collector current of 3A and a maximum collector-emitter voltage of 40V. It has a lower current and voltage rating than the BU406, but is commonly used in audio amplifiers and switching applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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